features low equivalent on-resistance marking :491 maximum ratings(t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector power dissipation 2 50 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 80 v collector-emitter breakdown voltage v (br)ceo 1 i c =10ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a h fe(1) v ce =5v,i c =1ma 100 h fe(2) 1 v ce =5v,i c =500ma 100 300 h fe(3) 1 v ce =5v,i c =1a 80 dc current gain h fe(4) 1 v ce =5v,i c =2a 30 v ce(sat)1 1 i c =500ma,i b =50ma 0.25 v collector-emitter saturation voltage v ce(sat)2 1 i c =1a,i b =100ma 0.5 v base-emitter saturation voltage v be(sat) 1 i c =1a,i b =100ma 1.1 v base-emitter voltage v be 1 v ce =5v,i c =1a 1 v transition frequency f t v ce =10v,i c =50ma,,f=100mhz 150 mhz collector output capacitance c ob v cb =10v,f=1mhz 10 pf 1 measured under pulsed conditions, pulse width=300 s, duty cycle 2%. so t -23 1. base 2. emitter 3. collector FMMT491 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics FMMT491 2 date:2011/05 www.htsemi.com semiconductor jinyu
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